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Package Marking and Ordering Information
Device Marking
FQP9P25
Device
FQP9P25
Package
TO220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = -250 μ A
I D = -250 μ A, Referenced to 25°C
V DS = -250 V, V GS = 0 V
V DS = -200 V, T C = 125°C
V GS = -30 V, V DS = 0 V
V GS = 30 V, V DS = 0 V
-250
--
--
--
--
--
--
-0.2
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = -250 μ A
V GS = -10 V, I D = -4.7 A
V DS = -40 V, I D = -4.7 A
-3.0
--
--
--
0.48
5.7
-5.0
0.62
--
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
910
170
27
1180
220
35
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -125 V, I D = -9.4 A,
R G = 25 ?
V DS = -200 V, I D = -9.4 A,
V GS = -10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
20
150
45
65
29
7.6
14
50
310
100
140
38
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
-9.4
-37.6
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = -9.4 A
V GS = 0 V, I S = -9.4 A,
dI F / dt = 100 A/ μ s
--
--
--
--
190
1.45
-5.0
--
--
V
ns
μ C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 11.8mH, I AS = -9.4A, V DD = -50V, R G = 25 ?, Starting T J = 25°C
3. I SD ≤ -9.4A, di/dt ≤ 300A/ μ s, V DD ≤ BV DSS, Starting T J = 25°C
4. Essentially independent of operating temperature
? 2000 Fairchild Semiconductor Corporation
FQP9P25 Rev. C0
2
www.fairchildsemi.com
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